Effects of Rapid Thermal Process and Scribing on the Characteristics of Silicon Metal-Oxide-Semiconductor (MOS) Devices
碩士 === 國立臺灣大學 === 電子工程學研究所 === 92 === With the ultra fast advancement of IC design and semiconductor fabrication technology，every tiny detail in the process of semiconductor devices has become a key point to determine whether the electrical performance can be good or not. Especially, the quality of...
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| Format: | Others |
| Language: | en_US |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/20190832990650653855 |