Strain-relaxation of Si/SiGe layers on insulator
碩士 === 國立臺灣大學 === 電子工程學研究所 === 92 === In this thesis, the directly hydrophilic wafer bonding method is achieved by rapid thermal process. A Si wafer is successfully bonded to another Si wafer capped with 700 nm BPSG by the rapid thermal process. The rapid thermal process strength the chemical bonds...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/72574277721473042640 |