Growth of Sb-containing Compound Semiconductor Materials and Devices by using Solid Source Molecular Beam Epitaxy
博士 === 國立臺灣大學 === 電機工程學研究所 === 92 === In this dissertation, we studied the growth of Sb-containing compound semiconductor materials and devices by using solid source molecular beam epitaxy (SSMBE). GaSb epilayers and GaAsSb/GaAs quantum wells were investigated. In the study of GaSb epilayer, high qu...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/70785072732008448779 |