Study of Aluminum Nitride Thin Films by Reactive Sputtering at Low Temperauter
碩士 === 國立臺灣科技大學 === 材料科技研究所 === 92 === In order to cope with the Third Generation Wireless Format (3G), materials suitable for high frequency is of importance. Aluminum Nitride thin film, which has outstanding piezoelectric characteristic and great sound velocity, can be use for Surface Acoustic Wa...
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| Format: | Others |
| Language: | zh-TW |
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2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/22019213025138398747 |