Surface photovoltage spectroscopy and photoluminescence study of stacked self-assembled InAs/GaAs quantum dots
碩士 === 國立臺灣科技大學 === 電子工程系 === 92 === We present a systematic study of four 30-layer stacks of molecular beam epitaxially grown self-assembled InAs quantum dots （QDs）with GaAs spacer layer thickness of 10,15,20, and 30nm, respectively, using surface photovoltage spectroscopy（SPS）and photoluminescence...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/23474547095652970939 |