Design of Si MOSFET’s for Applications of Deep Submicron and Power IC’s
博士 === 國立臺灣科技大學 === 電子工程系 === 92 === In this thesis, we have explored several practical device and process schemes for designing deep-submicron MOSFET’s, power MOSFET’s, and insulated-gate bipolar transistors (IGBT’s), respectively. Relative to deep-submicron MOSFET’s, first, a device sch...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/59774233288204295476 |