Dry etching of sapphire substrates and its application for GaN-based light-emitting diodes
碩士 === 國立虎尾科技大學 === 光電與材料科技研究所 === 92 === We have investigated the inductively coupled plasma etching of the sapphire substrate and its application for GaN-based LEDs. First the Ni mask upon the c-face (0001) sapphire substrate was deposited by E-beam evaporation. The etching process was performed u...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/dmnvjy |