The study on Schottky contacts and electronic material properties of porous silicon
碩士 === 中國文化大學 === 材料科學與製造研究所 === 92 === In this study, the porous silicon films are fabricated by ionization method. Various experimental parameters, such as ionization current density, etching time and HF concentration, are investigated ESCA, FESEM, EDS(Energy Dispersive Spectrometer) Mapping, and...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/64357181159561310113 |