STUDY OF SUBSTRATE CURRENT IN InGaP/GaAs HETEROJUNCTION BIPOLAR TRANSISTORS
碩士 === 國立雲林科技大學 === 電子與資訊工程研究所碩士班 === 92 === InGaP/GaAs heterojunction bipolar transistors (HBTs) exhibit excellent performance in high-speed and microwave applications. The semi-insulating GaAs substrate significantly reduces parasitic effects, and is usually considered non-conducting. Therefore, G...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/80772918646238348302 |