STUDY OF SUBSTRATE CURRENT IN InGaP/GaAs HETEROJUNCTION BIPOLAR TRANSISTORS

碩士 === 國立雲林科技大學 === 電子與資訊工程研究所碩士班 === 92 === InGaP/GaAs heterojunction bipolar transistors (HBTs) exhibit excellent performance in high-speed and microwave applications. The semi-insulating GaAs substrate significantly reduces parasitic effects, and is usually considered non-conducting. Therefore, G...

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Bibliographic Details
Main Authors: Yi-Jing Hsieh, 謝怡靜
Other Authors: none
Format: Others
Language:zh-TW
Published: 2004
Online Access:http://ndltd.ncl.edu.tw/handle/80772918646238348302

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