The Study of Optical and Electrical Characterization of InGaN/GaN Multiquantum Well Light Emitting Diodes
碩士 === 長庚大學 === 光電工程研究所 === 93 === This thesis present the study of electrical characterizations of InGaN/GaN multiquantum well light emitting diodes,by changing the doping concentration of P-GaN layer,the thickness of barrier located in the active layer and barrier with or without Si doped,the effe...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | zh-TW |
Published: |
2005
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Online Access: | http://ndltd.ncl.edu.tw/handle/55337901938092266324 |