Data retention optimization for DRAM with Negative Wordline Biases
博士 === 長庚大學 === 電機工程研究所 === 93 === Negative wordline bias scheme has been adapted in deep submicron to reduce the subthreshold leakage of deep submicron DRAM cell tran-sistors. With excessive negative wordline bias, gate induced drain leakage (GIDL) could dominate cell leakage and degrade product re...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/85059691298055695411 |