Study of Thermal Effect on Carriers Migration in InAs/GaAs Quantum-Dot Heterosystems by Photoluminescence
碩士 === 長庚大學 === 電子工程研究所 === 93 === In this thesis, the temperature-dependent and power-dependent photoluminescence (PL) for different growth interruption (GI) time of InAs/GaAs quantum-dot (QD) heterostructures are analyzed in detail. The difference of GI time results in the difference of QD densiti...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2005
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/38726303592461520980 |