Suppression of Boron transient enhanced diffusion in Silicon by Carbon implant
碩士 === 長庚大學 === 電子工程研究所 === 93 === In shallow junction transistors with boron-doped channels, transient enhanced diffusion(TED) is a key contributor to boron profile broadening. The role of carbon in silicon as a sink for self-interstitials, I have explored the feasibility of using carbon in the act...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/93121537367403939680 |