The Investigation of DC and RF Characteristics of SiGe Heterostructure MOSFET
碩士 === 正修科技大學 === 電子工程研究所 === 93 === In this thesis, we have successfully fabricated a series of p-type Si/SiGe metal-oxide-semiconductor field effect transistor (PMOSFET) with different Si cap thickness and investigated the influence of Si cap layer on the electrical performances of SiGe MOSFET. D...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/13340394387726526688 |