A Study of nc-Si:H Thin Films Growth by Hot-wire CVD

• Main Authors: Chi-Tai Liu, 劉奇泰
• Other Authors: S.B.Hwang
• Format: Others
• Language: zh-TW
• Published: 2005
• Online Access: http://ndltd.ncl.edu.tw/handle/87145825364846517400

碩士 === 建國科技大學 === 機電光系統研究所 === 93 === For thin-film-transistor (TFT) addressed liquid-crystal flat-panel displays (LCD’s), a-Si:H TFTs have been widely used.Their advantages include good switching characteristics, large-area deposition capability, reproducibility, and a low-temperature fabrication process. However, a-Si:H possesses much lower carrier mobility than polycrystalline silicon. In this study, the nanocrystalline silicon (nc-Si:H) film was deposited on glass or Si substrate in the Hot Wire Chemical Deposition System (HWCVD) by varying the growth conditions, the variation in structure and electronic properties of nc-Si:H film were investigated. Through SEM、AFM、micro-Raman、XRD and Hall measurement，it was found the nc-Si:H film deposited under growth condition，i.e，2.5% SiH4 diluted in H2，growth temperature 300℃ and growth pressure 0.7 torr，possesses the highest volume fraction of crystalline (Xc= 71.5 %)，Hall mobility (μ= 9 cm2／v-sec) and better crystallize characterization.