Study of Strain Engineering for the Transport Properties of Si-base MOSFETs
碩士 === 中原大學 === 電子工程研究所 === 93 === Strain engineering of Si-base materials has emerged as an important technique for improving the device performance other than conventional scaling method. The purpose of this dissertation is to use band theory to investigate the carriers transport properties of...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/09074600805878163463 |