Investigation on the Characteristics of ITO and its Application for GaN-based Light Emitting Diode

碩士 === 大葉大學 === 電機工程學系碩士在職專班 === 93 === In this study, we report on the characteristics and fabrication of Indium tin oxide film by RF magnetron sputtering. Additional, the effects of the processing conditions such as, operation pressure、gas ratio、operation temperature, etc.) on the optical properti...

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Main Authors: LIN CHENG HUI, 林政輝
Other Authors: 姚品全、韓斌
Format: Others
Language:zh-TW
Published: 2005
Online Access:http://ndltd.ncl.edu.tw/handle/56162134946809907683
id ndltd-TW-093DYU01442001
record_format oai_dc
spelling ndltd-TW-093DYU014420012015-10-13T15:29:17Z http://ndltd.ncl.edu.tw/handle/56162134946809907683 Investigation on the Characteristics of ITO and its Application for GaN-based Light Emitting Diode ITO性質探討與氮化鎵發光二極體之應用 LIN CHENG HUI 林政輝 碩士 大葉大學 電機工程學系碩士在職專班 93 In this study, we report on the characteristics and fabrication of Indium tin oxide film by RF magnetron sputtering. Additional, the effects of the processing conditions such as, operation pressure、gas ratio、operation temperature, etc.) on the optical properties, electrical properties of the thin film are also investigated. The post-deposition annealing has been done for ITO films in air and the effect of annealing temperature on the electrical, optical and structure properties of ITO ohmic contact was studied. 姚品全、韓斌 2005 學位論文 ; thesis 50 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 碩士 === 大葉大學 === 電機工程學系碩士在職專班 === 93 === In this study, we report on the characteristics and fabrication of Indium tin oxide film by RF magnetron sputtering. Additional, the effects of the processing conditions such as, operation pressure、gas ratio、operation temperature, etc.) on the optical properties, electrical properties of the thin film are also investigated. The post-deposition annealing has been done for ITO films in air and the effect of annealing temperature on the electrical, optical and structure properties of ITO ohmic contact was studied.
author2 姚品全、韓斌
author_facet 姚品全、韓斌
LIN CHENG HUI
林政輝
author LIN CHENG HUI
林政輝
spellingShingle LIN CHENG HUI
林政輝
Investigation on the Characteristics of ITO and its Application for GaN-based Light Emitting Diode
author_sort LIN CHENG HUI
title Investigation on the Characteristics of ITO and its Application for GaN-based Light Emitting Diode
title_short Investigation on the Characteristics of ITO and its Application for GaN-based Light Emitting Diode
title_full Investigation on the Characteristics of ITO and its Application for GaN-based Light Emitting Diode
title_fullStr Investigation on the Characteristics of ITO and its Application for GaN-based Light Emitting Diode
title_full_unstemmed Investigation on the Characteristics of ITO and its Application for GaN-based Light Emitting Diode
title_sort investigation on the characteristics of ito and its application for gan-based light emitting diode
publishDate 2005
url http://ndltd.ncl.edu.tw/handle/56162134946809907683
work_keys_str_mv AT linchenghui investigationonthecharacteristicsofitoanditsapplicationforganbasedlightemittingdiode
AT línzhènghuī investigationonthecharacteristicsofitoanditsapplicationforganbasedlightemittingdiode
AT linchenghui itoxìngzhìtàntǎoyǔdànhuàjiāfāguāngèrjítǐzhīyīngyòng
AT línzhènghuī itoxìngzhìtàntǎoyǔdànhuàjiāfāguāngèrjítǐzhīyīngyòng
_version_ 1717765108547977216