Application of an innovatively electroless-plated Co-based thin film as diffusion barrier for copper metallization
碩士 === 逢甲大學 === 材料科學所 === 93 === A self-aligned, electroless-plating�nprocess was develops to deposit ultra-low-resitivity (~30 ����-cm) cobalt-based (Co-B or Co-W-B) diffusion barriers and copper films on thermally oxidized SiO2 on Si wafers without involving activation or displacement seeing proce...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/82497874910826298924 |