Investigation of δ-doped InAlAs/InGaAs/InP High Electron Mobility Transistor
碩士 === 逢甲大學 === 電子工程所 === 93 === In this thesis, the characteristics of the InAlAs/InGaAs/InP HEMT with different channel structures by metal organic chemical vapor deposition (LP-MOCVD) have been studied. The channel structures were lattice-match channel, step-graded channel and inverse linear-grad...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/27107823135590119996 |