| Summary: | 碩士 === 和春技術學院 === 電機工程研究所 === 92 === ABSTRACT
In this study, the R.F. magnetron sputtering at room temperature , rapid thermal annealing (RTA) , Bi4Ti3O12+4wt%Bi2O3 and Bi4Ti3O12 as source target were used to deposit Bi4Ti3O12 thin films on the ITO/Glass substrate and the Pt/Ti/Si substrates.
The physical characteristics of Bi4Ti3O12 thin films deposited on different substrate with different sputtering parameters were obtained by the analyses of XRD、SEM、EDS and SIMS. The electrical properties of Bi4Ti3O12 thin films were measured using HP4294A impedance analyzer and HP4156B semicond- uctor parameters analyzer. The relative leakage current density, dielectric constant and polarization charge density under the influence of different fabricated parameters are also discussed.
From the experimental results, the optimal sputtering parameters were found to be RF power of 80W, working pressure of 1Pa, and the argon flow of 20sccm. The optimal annealing condition is at 700℃for 15 minutes on the ITO/Glass substrate, or at 650℃for 10 minutes on the Pt/Ti/Si substrate.The relative dielectric constant and the polarization charge density of the film on the ITO/Glass substrate are 307 and 22μC /cm2, and the leakage current of thin film was about 1×10-5A/cm2 under 250kV/cm without breakdown, or the relative dielectric constant of the film on the Pt/Ti/Si substrate with Bi4Ti3O124wt%Bi2O3 target is 286 and 2.5μC /cm2.
It demonstrates that Bi4Ti3O12 film is a considerable candidate for A.C. thin film electroluminescence and random access memory.
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