The Investigation of Interface and Electrical Properties in GaAs Wafer Bonding
碩士 === 國立中興大學 === 材料工程學研究所 === 93 === Using high resolution transmission electron microscopy (HRTEM), we investigated the microstructure of the interface fabricated after twist-bonding(90° & 180°) two N-type and P-type GaAs wafers respectively at a series of annealing temperatures (500 ~ 850℃) a...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/72745092137673109756 |