Study of the Optimum Terminal Structures for High Voltage IGBT
碩士 === 國立中興大學 === 電機工程學系 === 93 === IGBTs is a abbreviation of Insulated Gate Bipolar Transistors, which are extensively applied at the power device of power electronics product. It combines the insulated gate structure of MOSFET and the conductive characteristic of Bipolar Transistors, with both th...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/08004022447737658167 |