Fabrication of RF MEMS Switch by the post-CMOS process of etching silicon dioxide

碩士 === 國立中興大學 === 機械工程學系 === 93 === This work investigates the fabrication of a RF (ratio frequency) MEMS (micro elector mechanical system) switch using the standard 0.35μm 2P4M (double polysilicon four metal) CMOS (complementary metal oxide semiconductor) process and the post-process. The switch is...

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Bibliographic Details
Main Authors: Hsuan-Jung Peng, 彭宣榕
Other Authors: Ching-Liang Dai
Format: Others
Language:zh-TW
Published: 2005
Online Access:http://ndltd.ncl.edu.tw/handle/82696802796583475161