| Summary: | 碩士 === 國立中興大學 === 機械工程學系 === 93 === This work investigates the fabrication of a RF (ratio frequency) MEMS (micro elector mechanical system) switch using the standard 0.35μm 2P4M (double polysilicon four metal) CMOS (complementary metal oxide semiconductor) process and the post-process. The switch is a capacitive type, which is actuated by an electrostatic force. The structure of the switch consists of a CPW (coplanar waveguide) transmission lines and a suspended membrane. The CPW lines and the membrane are the metal layers of the CMOS process. The main advantage of MEMS switch is only needed a simple post-process, which is compatible with the CMOS process. The post-process uses an etchant, Silox Vapox III, to etch oxide layer to release the suspended membrane. Experiment results show that the pull-in voltage of the switch is about 18V. The insertion loss and isolation at 50GHz are -2.5 dB and -15dB, respectively.
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