Applying High G MEMS Accelerometer for Multi-layer Target Impact Signal Detection

• Main Authors: Kuang-Han Shen, 沈廣漢
• Other Authors: Syh-Tsang Jenq
• Format: Others
• Language: zh-TW
• Published: 2005
• Online Access: http://ndltd.ncl.edu.tw/handle/48073556194904026511

碩士 === 國立成功大學 === 航空太空工程學系碩博士班 === 93 === 　　Applying the MEMS process, the sensing modulus can be fabricated to measure the acceleration due to impact. We can fabricate poly-silicon strain gauge with piezo-resistive property, and also fabricate PZT with piezo-electric property by sol-gel method. We fabricated both sensors on the silicon wafer, and a cantilever silicon beam with these micro-strain sensors is used to measure the acceleration. The new design is not only smaller than before, but also has high sensing frequency and acceleration. It gives us a better view and more details of the transient behavior of impact. We can use this modulus to measure the impact acceleration signal when the punch impacts a single-layer or multi-layers target boards. In order to establish a system that is able to identify the layer number of target board, we also developed the impacting signal identification circuit and the counting circuit to count the layer number of board. These circuits can identity the signal successfully in double-layer target boards impact test. Finally, we can use commercial numerical analysis software “LS-Dyna” to simulate the impact test as well to verify the accuracy in the experiment, and have the good result.