Low Temperature Growth and P-type Doping Studies of Gallium Nitride Epilayers
博士 === 國立成功大學 === 微電子工程研究所碩博士班 === 93 === In this dissertation, the low temperature growth and characterization of GaN epitaxy layers have been investigated by radio frequency plasma assisted molecular beam epiaxy (RF-MBE). A novel modulated beam growth method was proposed to alternately grow Ga-enr...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/36685132034276544856 |