Fabrication of InGaAs/InAlAs/GaAs Metamorphic High Electron Mobility Transistor (MHEMT)
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 93 === In this thesis, two InP-based heterostructure field-effect transistors (HFETs), grown by molecular beam epitaxy (MBE) system, have been fabricated and investigated. We evaporated platinum and gold as Schottky contact metals to obtain high-temperature perfor...
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| Format: | Others |
| Language: | en_US |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/27271384219269892592 |