Fabrication of InGaAs/InAlAs/GaAs Metamorphic High Electron Mobility Transistor (MHEMT)
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 93 === In this thesis, two InP-based heterostructure field-effect transistors (HFETs), grown by molecular beam epitaxy (MBE) system, have been fabricated and investigated. We evaporated platinum and gold as Schottky contact metals to obtain high-temperature perfor...
Main Authors: | Chung-I Kao, 高忠義 |
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Other Authors: | Wen-Chau Liu |
Format: | Others |
Language: | en_US |
Published: |
2005
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Online Access: | http://ndltd.ncl.edu.tw/handle/27271384219269892592 |
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