Investigation of InP-based Heterojunction Bipolar Transistors and Optoelectronic Switching Devices
博士 === 國立成功大學 === 微電子工程研究所碩博士班 === 93 === In this dissertation, we have successfully fabricated and demonstrated InP-based heterojunction bipolar transistors (HBTs). The characteristics of InP/InGaAs HBT with a superlattice-collector (SC) structure and InGaAs/InGaAsP composite-collector HBT (CCHBT)...
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| Format: | Others |
| Language: | en_US |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/04342709273737323496 |