The study of SiCN PN Junction and SiCN/Si Hetero-junction High Temperature UV Detector
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 93 === This thesis reports the growth and analysis of SiCN films prepared by rapid-thermal chemical vapor deposition (RTCVD). During the growing process, we use two kinds of gas (Propane and MS) for the resource of carbon. Based on XRD, FTIR, AFM, the structure of...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/99690683524398739573 |