InGaN Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates
碩士 === 國立成功大學 === 電機工程學系碩博士班 === 93 === In this thesis, we have fabricated the pattern on substrate by using sapphire substrate. In generally, the GaN epilayers are usually grown on the sapphire substrate, because there is no large substrate available for GaN heterostructure growth. Due to the larg...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/nwgs48 |