The fabrication of single electron transistor utilizing Ga2O3 and ZnO nanostructures
碩士 === 國立成功大學 === 微機電系統工程研究所 === 93 === Since the integrated circuit（IC）industries and field effect transistor（FET） have invented, how to reduce the size of the devices is the trend and the key point of technology development. The size reduction of the device can not only speed up the operating rat...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/93909682834046673538 |