Reliability Comparison of Metal-Oxide-Semiconductor Capacitors with TiSi2 and CoSi2 as Gate Electrode Materials
碩士 === 國立暨南國際大學 === 電機工程學系 === 93 === Abstract Metal silicide has been used as source/drain and gate contact materials of metal-oxide-semiconductor (MOS) devices in integrated circuit manufacturing to lower the contact resistance. Tungsten silicide is one of the most commonly used one among the vari...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/28225613425768717898 |