The Fabrication and Investigation of A Novel Gate-Overlapped Lightly Doped Drain (GOLDD) Polycrystalline Silicon TFTs
碩士 === 國立交通大學 === 光電工程系所 === 93 === In this thesis, we had demonstrated a novel gate-overlapped lightly doped drain (GOLD) poly-Si TFT. Without any spacer fabrication, additional mask definition or RIE etch back processing, an effective GOLD TFT can be fabricated successfully and easily. The LDD len...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/08364589941109100110 |