The Fabrication and Characterization of Schottky Barrier Thin Film Transistor with Field-Induced-Drain
博士 === 國立交通大學 === 電子工程系所 === 93 === Abstract Schottky Barrier MOSFET is simpler in processing and inherently suitable for low temperature processing. It is also capable of ambipolar operation and short channel control. However, it suffers from deleterious off-state leakage current. If the shortcomi...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/s266z9 |