Characteristics of the Inter-Poly High-κ Dielectrics on NH3-Nitrided Bottom Poly-Si for Next Generation Flash Memories
碩士 === 國立交通大學 === 電子工程系所 === 93 === For the system-on-chip (SOC) application, a continuously scaling of the gate dielectrics for complementary metal oxide semiconductor (CMOS) and inter-poly dielectrics (IPDs) for electrically-erasable programmable read-only-memory (EEPROM) and stacked-gate flash me...
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| Format: | Others |
| Language: | en_US |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/70534485653353952349 |