The investigation of surface treatments prior to Al2O3 deposition
碩士 === 國立交通大學 === 電子工程系所 === 93 === The aggressive scaling of semiconductor device has led silicon dioxide gate dielectric to meet the physical limitation. The direct tunneling current occurs as gate oxide thickness thinner than 30A°. When the leakage current is more than 1A/cm2, high-k materials ar...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/93579221334410799345 |