Effects of Fluorine Incorporation on the Reliability Issues of pMOSFETs with HfO2/SiON Gate Stack
碩士 === 國立交通大學 === 電子工程系所 === 93 === In this work, F was incorporated before the source/drain implant step, which was subsequently diffused into the gate stack during later dopant activation. Effects of fluorine (F) on the reliabilities of pMOSFETs with HfO2/SiON gate stack have been thoroughly studi...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/92556188607419247701 |