Advanced Deep Sub-Micron MOSFETs with Ultra-Thin High-k Gate Dielectrics and Strained SiGe Channel
博士 === 國立交通大學 === 電子工程系所 === 93 === We have investigared the device characteristics and the reliability of the MOSFETs fabricated by advanced deep sub-micron technologies. To reduce the intolerable leakage current of the ultra-thin gate oxide, the nitrided oxides and high-k gate dielectrics are intr...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2005
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/21328555070730689088 |