Study on Ultrathin Plasma Nitrided Oxide and HfO2 High-k Gate Dielectrics
博士 === 國立交通大學 === 電子工程系所 === 93 === The degradation induced by channel hot electron (CHE) and substrate hot electron (SHE) injection in nMOSFETs with ultrathin plasma nitrided gate dielectric was studied in this thesis. Compared to the conventional thermal oxide, the ultrathin nitrided gate dielectr...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/16163179669846707656 |