Mobility Enhancement in Local Strained Channel nMOSFETs on (111) Substrate
碩士 === 國立交通大學 === 電子物理系所 === 93 === In this thesis, we investigate the local strain channel technique using deposition of SiN layer and stack of a-Si gate structure used in the (111) substrate. The device performance is improved due to the mechanical stress produced by thicker SiN capping layer or a...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/61124072008335876440 |