Impact of Ion Implantation Condition on the Characteristics of Double-Diffusion Drain MOSFETs

碩士 === 國立交通大學 === 電機資訊學院碩士在職專班 === 93 === With the progress of integrated circuit technology and the trend of system-on-a-chip (SOC), integrating high power devices with low power circuit is an important in the marketing of electronic application. The Double-Diffusion Drain MOS (DDDMOS) is the first...

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Bibliographic Details
Main Authors: Chi-Cheng Sheng, 沈啟誠
Other Authors: Bing-Yue Tsui
Format: Others
Language:zh-TW
Published: 2004
Online Access:http://ndltd.ncl.edu.tw/handle/06857323044934340294