Fabrication and electrical properties of SiGe nanowires
碩士 === 國立交通大學 === 奈米科技研究所 === 93 === In this thesis, we utilize the result of crystalline mismatch between silicon and germanium to deposit the silicon germanium film with strain. Two deposition schemes, ultra-high vacuum chemical vapor deposition system (UHV-CVD) and low-pressure chemical vapor dep...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2005
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/32785863741924544696 |