| Summary: | 碩士 === 國立交通大學 === 奈米科技研究所 === 93 === In this thesis, we utilize the result of crystalline mismatch between silicon and germanium to deposit the silicon germanium film with strain. Two deposition schemes, ultra-high vacuum chemical vapor deposition system (UHV-CVD) and low-pressure chemical vapor deposition system (LPCVD), are adopted for the deposition of silicon germanium films. Different composition between silicon and germanium are deposited and analyzed with ESCA. Finally, we utilized sidewall spacer method to fabricate silicon germanium nanowires.
In order to improve electrical characteristics, annealing and Ge condensation are adopted to reduce the defects and to increase the Ge concentration respectively. It was observed that conductance of the silicon germanium nanowires were improved about 100 times. Also, the Auger analysis after Ge condensation process did indicate the increase of Ge concentration on the surface of the silicon germanium film from Si0.8Ge0.2 to Si0.5Ge0.5. The source and drain contact pads between Si0.5Ge0.5 nanowires were made by aluminum and HP4155C was utilized for measurement of I-V characteristics.
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