Activation efficiency analysis of Si-Implanted n-GaN
碩士 === 國立中央大學 === 物理研究所 === 93 === Abstract The application of AlN capping layer on Si-implanted GaN was studied. Under high temperature annealing, AlN capping layer can decreases the loss of nitrogen from GaN surface, and achieve high activation efficiency. We use Aluminum Nitride (AlN) as target m...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/50771638787313503622 |