The Study of VBIC model for 0.18μm Silicon Germanium Hetero-junction Bipolar Transistor
碩士 === 國立中央大學 === 電機工程研究所 === 93 === Abstract The Silicon Germanium Hetero-junction Bipolar Transistor is fabricated by introducing Germanium into the base of conventional Silicon Bipolar Junction Transistor (Si BJT) to form the SiGe film. The performance of Silicon Germanium Hetero-junction Bipolar...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/92441124066300972871 |