Photoluminescence studies of Carbon-Implanted GaN/InGaN M.Q.W. LED
碩士 === 國立中央大學 === 光電科學研究所 === 93 === The photoluminescence properties of Carbon ion implantation into p-type GaN followed by rapid thermal annealing (RTA) in N2 ambient have been studied. By varying implantation concentrations, the p-type GaN can be converted into n-type GaN. Photoluminescence studi...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/20637719102299212217 |