Investigation of Heterostructure Field-Effect Transistors with Broad Gate Operation Voltages
碩士 === 國立高雄師範大學 === 物理學系 === 93 === In this thesis, two heterostructure field-effect transistors (HFET’s), grown by metal organic chemical vapor deposition (MOCVD) system, were fabricated and investigated. Experimentally, all proposed devices show excellent performances, such as high breakdown, low...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/41206825868740816096 |