Photoreflectance spectroscopy of InN at different temperature
碩士 === 國立中山大學 === 物理學系研究所 === 93 === InN is a semiconductor material of vary high electron mobility, so InN have potential for high speed electronic device. But the bandgap is not sure. We use photoreflectance spectroscopy to investigate bandgap of InN at different temperature. We use third derivati...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Online Access: | http://ndltd.ncl.edu.tw/handle/44381498866562854469 |